 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Collector MJ15023 MJ15025 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO IN PARAMETER Collector-base voltage VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage ANG CH MJ15023 MJ15025 E SEM Open emitter OND IC CONDITIONS TOR UC VALUE -350 -400 -200 -250 UNIT V MJ15023 Open base Open collector V --5 -16 -30 -5 V A A A W ae ae MJ15025 Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 250 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.70 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER MJ15023 IC=-0.1A ;IB=0 MJ15025 IC=-8A; IB=-0.8A IC=-16A; IB=-3.2A IC=-8A ; VCE=-4V MJ15023 MJ15025 MJ15023 MJ15025 VCE=-150V; IB=0 CONDITIONS MJ15023 MJ15025 SYMBOL MIN -200 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -250 -1.4 -4.0 -2.2 V V V VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage ICEO Collector cut-off current -0.5 VCE=-200V; IB=0 VCE=-200V; VBE(off)=-1.5V VCE=-250V; VBE(off)=-1.5V VEB=-5V; IC=0 mA ICEX Collector cut-off current IEBO hFE-1 hFE-2 Is/b COB fT Emitter cut-off current DC current gain DC current gain CHA IN Output capacitance Transition frequency Second breakdown collector current with base forward biased E SEM NG IC=-8A ; VCE=-4V IC=-16A ; VCE=-4V OND IC TOR UC -0.5 60 15 5 -5.0 -2.0 600 4 -0.25 mA mA VCE=-50Vdc,t=0.5 s, VCE=-80Vdc,t=0.5 s,Nonrepetitive IE=0 ; VCB=-10V;f=1.0MHz A pF MHz IC=-1A ; VCE=-10V;f=1.0MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ15023 MJ15025 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
Price & Availability of MJ15023
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |